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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/101

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DC FieldValueLanguage
dc.contributor.authorJain, Amitabh-
dc.contributor.authorJain, Uma-
dc.date.accessioned2005-03-22T09:10:29Z-
dc.date.available2005-03-22T09:10:29Z-
dc.date.issued1995-
dc.identifier.citationThin Solid Films, 256, 116-119en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/101-
dc.description.abstractA mechanism is proposed for the modification of stresses in thin films by irradiation. A tensile stress causes preferential alignment of interstitial loops such that the normal to the plane of the loop is parallel to the direction of the stress. The aligned loops grow and produce a positive strain in the lattice, which relieves the initial stress.en
dc.format.extent385593 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectChromiumen
dc.subjectIon bombardmenten
dc.subjectRadiation damageen
dc.subjectStressen
dc.titleA Physical Basis for Irradiation-Induced Modification of Thin-Film Stressesen
dc.typeArticleen
Appears in Collections:Industrail Tribology Machine Dynamics [ITMMEC]

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