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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/104

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dc.contributor.authorJain, Amitabh-
dc.date.accessioned2005-03-23T06:16:40Z-
dc.date.available2005-03-23T06:16:40Z-
dc.date.issued1995-
dc.identifier.citationScripta Metallurgica et Materialia 32 ( 4 ) 589-593en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/104-
dc.description.abstractDeposition of thin films and ion implantation in solids have been actively pursued as a means of enhancing surface properties. Conventional thin films often suffer from stresses which limit their mechanical integrity (1). Ion implantation has a limitation in terms of the depth to which the surface region is influenced. Ion beam assisted deposition (IBAD) which began with the work of Hirsch and Varga (2) has been shown to avoid these disadvantages by the simultaneous use of deposition and ion bombardment techniques. Although there are many possible benefits of using IBAD (3,4,5), we will be concerned here primarily with reduced stresses. Attempts have been made to explain the process involved but a full understanding is yet to emerge. In this work we show for the first time that the stress that tends to appear in a growing film will influence the microstructural evolution caused by ion bombardment in a manner that causes the stress to reduce.en
dc.format.extent329294 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectthin filmsen
dc.subjectand ion implantationen
dc.subjectIon implantation has a limitationen
dc.subjectbeam assisted deposition (IBAD)en
dc.subjection bombardment techniquesen
dc.subjectinfluence the microstructural evolutionen
dc.titleA physical basis for stress reduction during ion beam assisted depositionen
dc.typeArticleen
Appears in Collections:Chemistry

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