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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1073

Title: Role of incorporated hydrogen in non-stoichiometric photo-deposited silicon nitride films
Authors: Sahu, B S
Srivastava, P
Sehgal, H K
Agnihotri, O P
Keywords: Silicon nitride
Hydrogen
Fourier transform infrared spectroscopy (FTIR)
Deposition process
Issue Date: 2002
Citation: Thin Solid Films, 415(1-2), 53-56
Abstract: Silicon nitride films were deposited by mercury-sensitized photochemical vapor deposition utilizing a gaseous mixture of Si2H6 (2% in Ar) and NH3 under 253.7 nm ultraviolet light irradiation. Non-stoichiometric silicon-rich and nitrogen-rich samples were deposited by varying gas flow ratio. High partial pressure of disilane results in the formation of clusters, with the incorporation of hydrogen in the form of Si---H and N---H stretching modes below the detection level of Fourier transform infrared spectroscopy. In the nitrogen-rich sample the bonded hydrogen concentration is 0.56×1018 cm−2. After annealing the samples at 350 °C for 3 h in a pressure of 50 mTorr, the interface electronic state density decreases for silicon-rich sample and increases for nitrogen-rich sample.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/1073
Appears in Collections:Physics

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