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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1073

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dc.contributor.authorSahu, B S-
dc.contributor.authorSrivastava, P-
dc.contributor.authorSehgal, H K-
dc.contributor.authorAgnihotri, O P-
dc.identifier.citationThin Solid Films, 415(1-2), 53-56en
dc.description.abstractSilicon nitride films were deposited by mercury-sensitized photochemical vapor deposition utilizing a gaseous mixture of Si2H6 (2% in Ar) and NH3 under 253.7 nm ultraviolet light irradiation. Non-stoichiometric silicon-rich and nitrogen-rich samples were deposited by varying gas flow ratio. High partial pressure of disilane results in the formation of clusters, with the incorporation of hydrogen in the form of Si---H and N---H stretching modes below the detection level of Fourier transform infrared spectroscopy. In the nitrogen-rich sample the bonded hydrogen concentration is 0.56×1018 cm−2. After annealing the samples at 350 °C for 3 h in a pressure of 50 mTorr, the interface electronic state density decreases for silicon-rich sample and increases for nitrogen-rich sample.en
dc.format.extent114418 bytes-
dc.subjectSilicon nitrideen
dc.subjectFourier transform infrared spectroscopy (FTIR)en
dc.subjectDeposition processen
dc.titleRole of incorporated hydrogen in non-stoichiometric photo-deposited silicon nitride filmsen
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