EPrints@IIT Delhi : Item 2074/1089

Please use this identifier to cite or link to this item: http://hdl.handle.net/2074/1089

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DC Field	Value	Language
contributor.author	Patel, B K	-
contributor.author	Mythili, R	-
contributor.author	Vijayalaxmi, R	-
contributor.author	Soni, R K	-
contributor.author	Behera, S N	-
contributor.author	Sahu, S N	-
date.accessioned	2005-12-30T04:26:51Z	-
date.available	2005-12-30T04:26:51Z	-
date.issued	2002	-
identifier.citation	Physica B: Condensed Matter, 322(1-2), 146-153	en
identifier.uri	http://eprint.iitd.ac.in/dspace/handle/2074/1089	-
description.abstract	In situ current (I)–(V) voltage studies were carried out to get a better understanding of the mechanism of formation of porous silicon (PS). It is observed that on decreasing the anodization current density below a critical value (75 mAcm−2) the size of the PS crystallites increases while for its values above 75 mAcm−2 electropolishing occurs. Raman spectroscopic studies show that the sizes of the Si crystallites are small and change from 4.7 to 3.8 nm when the current densities are increased from 20 to 50 mAcm−2. Transmission electron micrographs show preferential propagation of pores whereas transmission electron diffraction (TED) patterns show typical crystalline Si with the cubic structure.	en
format.extent	401489 bytes	-
format.mimetype	application/pdf	-
language.iso	en	en
subject	Porous Si	en
subject	Etching	en
subject	Raman scattering	en
title	Porous Si formation and study of its structural and vibrational properties	en
type	Article	en
Appears in Collections:	Physics

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