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http://hdl.handle.net/2074/1101
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| DC Field | Value | Language |
|---|
| contributor.author | Thirumal, M | - |
| contributor.author | Jawahar, I N | - |
| contributor.author | Surendiran, K P | - |
| contributor.author | Mohanan, P | - |
| contributor.author | Ganguli, A K | - |
| date.accessioned | 2005-12-30T04:30:01Z | - |
| date.available | 2005-12-30T04:30:01Z | - |
| date.issued | 2002 | - |
| identifier.citation | Materials Research Bulletin, 3(14), 2321-2334 | en |
| identifier.uri | http://eprint.iitd.ac.in/dspace/handle/2074/1101 | - |
| description.abstract | Oxides belonging to the families Ba3ZnTa2−xNbxO9 and Ba3MgTa2−xNbxO9 were synthesized by the solid state reaction route. Sintering temperatures of 1300°C led to oxides with disordered (cubic) perovskite structure. However, on sintering at 1425°C hexagonally ordered structures were obtained for Ba3MgTa2−xNbxO9 over the entire range (0≤x≤1) of composition, while for Ba3ZnTa2−xNbxO9 the ordered structure exists in a limited range (0≤x≤0.5). The dielectric constant is close to 30 for the Ba3ZnTa2−xNbxO9 family of oxides while the Mg analogues have lower dielectric constant of 18 in the range 50 Hz to 500 kHz. At microwave frequencies (5–7 GHz) dielectric constant increases with increase in niobium concentration (22–26) for Ba3ZnTa2−xNbxO9; for Ba3MgTa2−xNbxO9 it varies between 12 and 14. The "Zn" compounds have much higher quality factors and lower temperature coefficient of resonant frequency compared to the "Mg" analogues. | en |
| format.extent | 549957 bytes | - |
| format.mimetype | application/pdf | - |
| language.iso | en | en |
| subject | Oxides | en |
| subject | Chemical synthesis | en |
| subject | X-ray diffraction | en |
| subject | Dielectric properties | en |
| title | Ba3ZnTa2−xNbxO9 and Ba3MgTa2−xNbxO9 (0≤x≤1): synthesis, structure and dielectric properties | en |
| type | Article | en |
| Appears in Collections: | Chemistry
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| thirumalsyn2002.pdf | | 537Kb | Adobe PDF | View/Open |
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