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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1110

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dc.contributor.authorJoshi, Rakesh K-
dc.contributor.authorSehgal, H K-
dc.date.accessioned2006-01-02T11:18:41Z-
dc.date.available2006-01-02T11:18:41Z-
dc.date.issued2002-
dc.identifier.citationJournal of Crystal Growth, 247(3-4), 425-427en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1110-
dc.description.abstractChange of majority carrier type was achieved in nanocrystalline Pb(1−x)Fe(x)S thin films by applying a DC-bias on the substrate during their growth by solution growth technique. Critical control of biasing and pH of the solution bath are observed to be necessary to achieve this change. The DC-bias results in slight change in relative concentrations of the constituents in the films, which lead to change in majority carriers without any measurable change in lattice parameter. This modification to the conventional solution growth technique provides the possibility to grow abrupt homojunctions in the nanocrystalline films by sudden change in DC-biasing during film growth.en
dc.format.extent29340 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectCarrier typeen
dc.subjectDC-biasen
dc.subjectGrowth from solutionsen
dc.titleBias-induced changes in carrier type of Pb(1−x)Fe(x)S nanocrystalline solution grown thin filmsen
dc.typeArticleen
Appears in Collections:Physics

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