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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1110

Title: Bias-induced changes in carrier type of Pb(1−x)Fe(x)S nanocrystalline solution grown thin films
Authors: Joshi, Rakesh K
Sehgal, H K
Keywords: Carrier type
DC-bias
Growth from solutions
Issue Date: 2002
Citation: Journal of Crystal Growth, 247(3-4), 425-427
Abstract: Change of majority carrier type was achieved in nanocrystalline Pb(1−x)Fe(x)S thin films by applying a DC-bias on the substrate during their growth by solution growth technique. Critical control of biasing and pH of the solution bath are observed to be necessary to achieve this change. The DC-bias results in slight change in relative concentrations of the constituents in the films, which lead to change in majority carriers without any measurable change in lattice parameter. This modification to the conventional solution growth technique provides the possibility to grow abrupt homojunctions in the nanocrystalline films by sudden change in DC-biasing during film growth.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/1110
Appears in Collections:Physics

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