EPrints@IIT Delhi >
Faculty Research Publicatons  >
Physics >

Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1134

Title: Photoluminescence and Raman study of iron-passivated porous silicon
Authors: Mavi, H S
Rasheed, B G
Shukla, A K
Soni, R K
Abbi, S C
Keywords: Porous silicon
Raman spectroscopy
Issue Date: 2003
Citation: Materials Science and Engineering B, 97(3), 239-244
Abstract: Degradation of porous silicon (PS) fabricated by laser-induced etching was studied using photoluminescence (PL) and Raman spectroscopy. Freshly prepared samples were given a heat treatment in hydrofluoric acid plus ferric nitrate solution to produce iron-passivated porous silicon (IPS) samples. PL measurements on IPS show different peak positions and widths as compared to freshly prepared non-passivated PS samples. Results were analyzed using a quantum confinement model. Exposing IPS to air for more than 4 months resulted in no degradation of PL intensity or changes in the peak position and size distribution. Raman spectra of IPS also revealed changes in line-shape asymmetry in comparison to freshly prepared non-passivated PS samples. The data were explained using the phonon confinement in two-dimensions. There is good agreement between PL and Raman data for the size of nanocrystallites participating in iron-passivation.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/1134
Appears in Collections:Physics

Files in This Item:

File Description SizeFormat
mavipho2003.pdf312.24 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback