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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2074/1134
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Full metadata record
| DC Field | Value | Language |
|---|
| contributor.author | Mavi, H S | - |
| contributor.author | Rasheed, B G | - |
| contributor.author | Shukla, A K | - |
| contributor.author | Soni, R K | - |
| contributor.author | Abbi, S C | - |
| date.accessioned | 2006-01-02T11:24:22Z | - |
| date.available | 2006-01-02T11:24:22Z | - |
| date.issued | 2003 | - |
| identifier.citation | Materials Science and Engineering B, 97(3), 239-244 | en |
| identifier.uri | http://eprint.iitd.ac.in/dspace/handle/2074/1134 | - |
| description.abstract | Degradation of porous silicon (PS) fabricated by laser-induced etching was studied using photoluminescence (PL) and Raman spectroscopy. Freshly prepared samples were given a heat treatment in hydrofluoric acid plus ferric nitrate solution to produce iron-passivated porous silicon (IPS) samples. PL measurements on IPS show different peak positions and widths as compared to freshly prepared non-passivated PS samples. Results were analyzed using a quantum confinement model. Exposing IPS to air for more than 4 months resulted in no degradation of PL intensity or changes in the peak position and size distribution. Raman spectra of IPS also revealed changes in line-shape asymmetry in comparison to freshly prepared non-passivated PS samples. The data were explained using the phonon confinement in two-dimensions. There is good agreement between PL and Raman data for the size of nanocrystallites participating in iron-passivation. | en |
| format.extent | 319731 bytes | - |
| format.mimetype | application/pdf | - |
| language.iso | en | en |
| subject | Porous silicon | en |
| subject | Photoluminescence | en |
| subject | Raman spectroscopy | en |
| subject | Passivation | en |
| title | Photoluminescence and Raman study of iron-passivated porous silicon | en |
| type | Article | en |
| Appears in Collections: | Physics
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| mavipho2003.pdf | | 312Kb | Adobe PDF | View/Open |
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