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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1134

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dc.contributor.authorMavi, H S-
dc.contributor.authorRasheed, B G-
dc.contributor.authorShukla, A K-
dc.contributor.authorSoni, R K-
dc.contributor.authorAbbi, S C-
dc.identifier.citationMaterials Science and Engineering B, 97(3), 239-244en
dc.description.abstractDegradation of porous silicon (PS) fabricated by laser-induced etching was studied using photoluminescence (PL) and Raman spectroscopy. Freshly prepared samples were given a heat treatment in hydrofluoric acid plus ferric nitrate solution to produce iron-passivated porous silicon (IPS) samples. PL measurements on IPS show different peak positions and widths as compared to freshly prepared non-passivated PS samples. Results were analyzed using a quantum confinement model. Exposing IPS to air for more than 4 months resulted in no degradation of PL intensity or changes in the peak position and size distribution. Raman spectra of IPS also revealed changes in line-shape asymmetry in comparison to freshly prepared non-passivated PS samples. The data were explained using the phonon confinement in two-dimensions. There is good agreement between PL and Raman data for the size of nanocrystallites participating in iron-passivation.en
dc.format.extent319731 bytes-
dc.subjectPorous siliconen
dc.subjectRaman spectroscopyen
dc.titlePhotoluminescence and Raman study of iron-passivated porous siliconen
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