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http://hdl.handle.net/2074/1134
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| Title: | Photoluminescence and Raman study of iron-passivated porous silicon |
| Authors: | Mavi, H S
Rasheed, B G
Shukla, A K
Soni, R K
Abbi, S C |
| Keywords: | Porous silicon
Photoluminescence
Raman spectroscopy
Passivation |
| Issue Date: | 2003 |
| Citation: | Materials Science and Engineering B, 97(3), 239-244 |
| Abstract: | Degradation of porous silicon (PS) fabricated by laser-induced etching was studied using photoluminescence (PL) and Raman spectroscopy. Freshly prepared samples were given a heat treatment in hydrofluoric acid plus ferric nitrate solution to produce iron-passivated porous silicon (IPS) samples. PL measurements on IPS show different peak positions and widths as compared to freshly prepared non-passivated PS samples. Results were analyzed using a quantum confinement model. Exposing IPS to air for more than 4 months resulted in no degradation of PL intensity or changes in the peak position and size distribution. Raman spectra of IPS also revealed changes in line-shape asymmetry in comparison to freshly prepared non-passivated PS samples. The data were explained using the phonon confinement in two-dimensions. There is good agreement between PL and Raman data for the size of nanocrystallites participating in iron-passivation. |
| URI: | http://eprint.iitd.ac.in/dspace/handle/2074/1134 |
| Appears in Collections: | Physics
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| mavipho2003.pdf | | 312Kb | Adobe PDF | View/Open |
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