EPrints@IIT Delhi : Item 2074/1178

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DC Field	Value	Language
contributor.author	M Jagadesh Kumar	-
contributor.author	Reddy, C Linga	-
date.accessioned	2006-01-18T05:50:31Z	-
date.available	2006-01-18T05:50:31Z	-
date.issued	2003	-
identifier.citation	Microelectronics Reliability, 43(7), 1145-1149	en
identifier.uri	http://eprint.iitd.ac.in/dspace/handle/2074/1178	-
description.abstract	We report a novel BiCMOS compatible lateral SiC N-emitter, SiGe P-base Schottky metal-collector NPM HBT on SOI. The proposed lateral NPM HBT performance has been evaluated in detail using 2-dimensional device simulation by comparing it with the equivalent NPN HBT and homojunction silicon NPM BJT structures. Based on our simulation results, it is observed that while both the lateral NPM and NPN HBTs exhibit high current gain, high cut-off frequency compared to the homojunction NPN BJT, the lateral NPM HBT has the additional benefit of suppressed Kirk effect and excellent transient response over its counterpart lateral NPN HBT. The improved performance of the proposed NPM HBT is discussed in detail and a CMOS compatible process is suggested for its fabrication.	en
format.extent	127724 bytes	-
format.mimetype	application/pdf	-
language.iso	en	en
subject	2-dimensional device	en
subject	homojunction silicon	en
subject	counterpart lateral	en
subject	SiC N-emitter	en
subject	NPN HBT	en
subject	NPN BJT	en
title	2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI	en
type	Article	en
Appears in Collections:	Electrical Engineering

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