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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1178

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dc.contributor.authorM Jagadesh Kumar-
dc.contributor.authorReddy, C Linga-
dc.date.accessioned2006-01-18T05:50:31Z-
dc.date.available2006-01-18T05:50:31Z-
dc.date.issued2003-
dc.identifier.citationMicroelectronics Reliability, 43(7), 1145-1149en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1178-
dc.description.abstractWe report a novel BiCMOS compatible lateral SiC N-emitter, SiGe P-base Schottky metal-collector NPM HBT on SOI. The proposed lateral NPM HBT performance has been evaluated in detail using 2-dimensional device simulation by comparing it with the equivalent NPN HBT and homojunction silicon NPM BJT structures. Based on our simulation results, it is observed that while both the lateral NPM and NPN HBTs exhibit high current gain, high cut-off frequency compared to the homojunction NPN BJT, the lateral NPM HBT has the additional benefit of suppressed Kirk effect and excellent transient response over its counterpart lateral NPN HBT. The improved performance of the proposed NPM HBT is discussed in detail and a CMOS compatible process is suggested for its fabrication.en
dc.format.extent127724 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subject2-dimensional deviceen
dc.subjecthomojunction siliconen
dc.subjectcounterpart lateralen
dc.subjectSiC N-emitteren
dc.subjectNPN HBTen
dc.subjectNPN BJTen
dc.title2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOIen
dc.typeArticleen
Appears in Collections:Electrical Engineering

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