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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1193

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dc.contributor.authorSoni, R K-
dc.contributor.authorBassam, G R-
dc.contributor.authorAbbi, S C-
dc.date.accessioned2006-01-19T06:42:15Z-
dc.date.available2006-01-19T06:42:15Z-
dc.date.issued2003-
dc.identifier.citationApplied Surface Science, 214(1-4), 151-160en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1193-
dc.description.abstractVarious laser wavelengths have been employed to synthesize luminescent nanocrystallites of n-type silicon by laser-induced etching (LIE) process. These nanocrystallites exhibit light emission in the visible region. Both the photoluminescence (PL) emission and the surface morphology of the photosynthesized layer were significantly controlled by laser processing parameters. An estimate of the nanocrystallite sizes present in the photosynthesized layer was obtained from a modified quantum confinement model appropriate for spherical nanocrystallites.en
dc.format.extent512425 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectNanostructuresen
dc.subjectPhotoluminescenceen
dc.subjectLaser-induced etchingen
dc.titleLaser-controlled photoluminescence characteristics of silicon nanocrystallites produced by laser-induced etchingen
dc.typeArticleen
Appears in Collections:Physics

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