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Please use this identifier to cite or link to this item: http://hdl.handle.net/2074/1239

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contributor.authorPandey, P T-
contributor.authorSharma, G L-
contributor.authorAwasthi, D K-
contributor.authorVankar, V D-
date.accessioned2006-01-24T06:15:52Z-
date.available2006-01-24T06:15:52Z-
date.issued2003-
identifier.citationVacuum, 72, 297–305en
identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1239-
description.abstractDiamond thin films have been synthesized by hot-filament chemical vapor deposition process using a mixture of methane and hydrogen gases. The samples were subjected to very high-energy ion irradiation (100MeV Au7+ ions).The field emission characteristics of ion-irradiated samples have been studied. High emission currents and low turn-on and threshold fields were obtained for ion-irradiated samples. The as-deposited and the ion-irradiated samples have been characterized by X-ray Diffraction, Scanning Electron Microscopy and Micro-Raman Spectroscopy techniques and the resulting changes are correlated with field emission results.en
format.extent524852 bytes-
format.mimetypeapplication/pdf-
language.isoenen
subjectDiamonden
subjectChemical vapor depositionen
subjectField emissionen
subjectIon irradiationen
titleField emission characteristics of high-energy ion-irradiated polycrystalline diamond thin filmsen
typeArticleen
Appears in Collections:Physics

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