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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1239

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DC FieldValueLanguage
dc.contributor.authorPandey, P T-
dc.contributor.authorSharma, G L-
dc.contributor.authorAwasthi, D K-
dc.contributor.authorVankar, V D-
dc.date.accessioned2006-01-24T06:15:52Z-
dc.date.available2006-01-24T06:15:52Z-
dc.date.issued2003-
dc.identifier.citationVacuum, 72, 297–305en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1239-
dc.description.abstractDiamond thin films have been synthesized by hot-filament chemical vapor deposition process using a mixture of methane and hydrogen gases. The samples were subjected to very high-energy ion irradiation (100MeV Au7+ ions).The field emission characteristics of ion-irradiated samples have been studied. High emission currents and low turn-on and threshold fields were obtained for ion-irradiated samples. The as-deposited and the ion-irradiated samples have been characterized by X-ray Diffraction, Scanning Electron Microscopy and Micro-Raman Spectroscopy techniques and the resulting changes are correlated with field emission results.en
dc.format.extent524852 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectDiamonden
dc.subjectChemical vapor depositionen
dc.subjectField emissionen
dc.subjectIon irradiationen
dc.titleField emission characteristics of high-energy ion-irradiated polycrystalline diamond thin filmsen
dc.typeArticleen
Appears in Collections:Physics

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