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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1341

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dc.contributor.authorMeera, K-
dc.contributor.authorMuralidharan, R-
dc.contributor.authorTripathi, A K-
dc.contributor.authorDhanasekaran, R-
dc.contributor.authorRamasamy, P-
dc.date.accessioned2006-02-20T09:20:01Z-
dc.date.available2006-02-20T09:20:01Z-
dc.date.issued2004-
dc.identifier.citationJournal of Crystal Growth, 260(3-4), 414-421en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1341-
dc.description.abstractThiourea-doped Triglycine sulphate (ThTGS) crystal with three different concentrations of thiourea was grown from aqueous solution by slow cooling technique. The cell parameters were determined from powder X-ray diffraction analysis. A qualitative analysis of the presence of thiourea in doped crystals was estimated by FTIR analysis. Microhardness studies were carried out using Leitz Weitzler hardness tester at room temperature. Dielectric properties of the crystals were studied which showed a shift in the Tc when compared to pure TGS crystal. Pyroelectric studies were carried out and the pyroelectric coefficient was found. Piezoelectric studies (d33 coefficient) has also been carried out.en
dc.format.extent458643 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectCharacterisationen
dc.subjectGrowth from solutionsen
dc.subjectThTGS crystalen
dc.subjectDielectric materialsen
dc.subjectFerroelectric materialsen
dc.subjectPiezoelectric materialsen
dc.titleGrowth of thiourea-doped TGS crystals and their characterisationen
dc.typeArticleen
Appears in Collections:Physics

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