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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1385

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dc.contributor.authorReddy, G Venkateshwar-
dc.contributor.authorM Jagadesh Kumar-
dc.identifier.citationMicroelectronics Journal, 35(9), 761-765en
dc.description.abstractThe novel features of an asymmetric double gate single halo (DG-SH) doped SOI MOSFET are explored theoretically and compared with a conventional asymmetric DG SOI MOSFET. The two-dimensional numerical simulation studies demonstrate that the application of single halo to the double gate structure results in threshold voltage roll-up, reduced DIBL, high drain output resistance, kink free output characteristics and increase in the breakdown voltage when compared with a conventional DG structure. For the first time, we show that the presence of single halo on the source side results in a step function in the surface potential, which screens the source side of the structure from the drain voltage variations. This work illustrates the benefits of high performance DG-SH SOI MOS devices over conventional DG MOSFET and provides an incentive for further experimental exploration.en
dc.format.extent330473 bytes-
dc.subjectSilicon-on-insulator (SOI)en
dc.subjectDouble Gate (DG) SOI MOSFETen
dc.subjectChannel engineeringen
dc.subjectSingle halo (SH)en
dc.titleInvestigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation studyen
Appears in Collections:Electrical Engineering

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