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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1389

Title: Electrical properties of PZT thin films grown by sol–gel and PLD using a seed layer
Authors: Pandey, S K
James, A R
Chandra Prakash
Goel, T C
Zimik, K
Keywords: Ceramics
Thin films
Electrical measurements
Oxides
Zirconium
Issue Date: 2004
Citation: Materials Science and Engineering B, 112(1), 96-100
Abstract: Lead Zirconate Titanate (PZT) thin films (with molar ratio of Zr:Ti::65/35) were deposited by pulsed laser deposition (PLD) and sol–gel technique on Pt/Si (1 1 1), and Pt/Si (1 0 0) substrates. A seed layer of PbTiO3 (0.1 μm) was coated by sol–gel on the substrates before depositing PZT by PLD and sol–gel. A metal/ferroelectric/metal (MFM) capacitor structure, formed by depositing gold electrode on top of the film, was used for C–V and P–E measurements. A large remnant polarization (Pr = 56.8 μC/cm2) was observed on Pt/Si (1 1 1) substrates for the films deposited by sol–gel. Comparison of properties of PZT film deposited by these two techniques is discussed.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/1389
Appears in Collections:Physics

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