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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1389

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dc.contributor.authorPandey, S K-
dc.contributor.authorJames, A R-
dc.contributor.authorChandra Prakash-
dc.contributor.authorGoel, T C-
dc.contributor.authorZimik, K-
dc.date.accessioned2006-02-22T04:36:57Z-
dc.date.available2006-02-22T04:36:57Z-
dc.date.issued2004-
dc.identifier.citationMaterials Science and Engineering B, 112(1), 96-100en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1389-
dc.description.abstractLead Zirconate Titanate (PZT) thin films (with molar ratio of Zr:Ti::65/35) were deposited by pulsed laser deposition (PLD) and sol–gel technique on Pt/Si (1 1 1), and Pt/Si (1 0 0) substrates. A seed layer of PbTiO3 (0.1 μm) was coated by sol–gel on the substrates before depositing PZT by PLD and sol–gel. A metal/ferroelectric/metal (MFM) capacitor structure, formed by depositing gold electrode on top of the film, was used for C–V and P–E measurements. A large remnant polarization (Pr = 56.8 μC/cm2) was observed on Pt/Si (1 1 1) substrates for the films deposited by sol–gel. Comparison of properties of PZT film deposited by these two techniques is discussed.en
dc.format.extent247095 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectCeramicsen
dc.subjectThin filmsen
dc.subjectElectrical measurementsen
dc.subjectOxidesen
dc.subjectZirconiumen
dc.titleElectrical properties of PZT thin films grown by sol–gel and PLD using a seed layeren
dc.typeArticleen
Appears in Collections:Physics

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