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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1405

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dc.contributor.authorMehta, B R-
dc.contributor.authorKruis, F E-
dc.date.accessioned2006-02-23T04:05:29Z-
dc.date.available2006-02-23T04:05:29Z-
dc.date.issued2004-
dc.identifier.citationSolar Energy Materials and Solar Cells, 85(1), 107-113en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1405-
dc.description.abstractThis paper presents a device proposal based on a junction between an absorbing semiconductor nanorod structure and another window semiconductor layer for solar cell application. The possibility of band gap tuning by varying the diameter of the nanorods along the length, higher absorption coefficient at nanodimensions, the presence of a strong electrical field at the nanorod-window semiconductor nanojunctions and the carrier confinement in lateral direction are expected to result in enhanced absorption and collection efficiency in the proposed device. Process steps, feasibility, technological tasks needed for the realization of the proposed structure and the novelty of the present structure in comparison to the already reported nanostructured solar cells are also discussed.en
dc.format.extent223548 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectNanorodsen
dc.subjectNanojunctionsen
dc.subjectGraded diameteren
dc.subjectOriented structureen
dc.subjectNanoparticleen
dc.titleA graded diameter and oriented nanorod–thin film structure for solar cell application: a device proposalen
dc.typeArticleen
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