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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1443

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dc.contributor.authorJoshi, Rakesh K-
dc.contributor.authorDurai, L-
dc.contributor.authorSehgal, H K-
dc.date.accessioned2006-02-25T09:48:55Z-
dc.date.available2006-02-25T09:48:55Z-
dc.date.issued2005-
dc.identifier.citationPhysica E: Low-dimensional Systems and Nanostructures, 25(4), 374-377en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1443-
dc.description.abstractChange of majority carrier type from p to n in PbS semiconductor nanoparticle films grown from a solution bath has been achieved by applying an appropriate negative DC-bias to substrate during growth. This change is attributed to the observed decrease of sulfur content in the films which is accompanied by reduction in grain size on increasing the negative bias applied to the substrate.en
dc.format.extent178642 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectSolution growthen
dc.subjectNanoparticlesen
dc.subjectLead sulfideen
dc.subjectCarrier typeen
dc.titleChange of majority carrier type in PbS nanoparticle filmsen
dc.typeArticleen
Appears in Collections:Physics

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