EPrints@IIT Delhi >
Faculty Research Publicatons  >
Physics >

Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1592

Title: Amorphous silicon as a resist material
Authors: Gupta, P K
Chopra, K L
Keywords: amorphous silicon
glow-discharge hydrogen plasma
Issue Date: 1988
Citation: Electron Device Letters, IEEE, 9(1), 17 - 19
Abstract: Lithographic properties of amorphous silicon films exposed to glow-discharge hydrogen plasma and ion beams have been investigated. The rate of film etching by a CF4 plasma is lowered by exposure, giving rise to a negative resist behavior of the material. The sensitivity and contrast are ~1018 ions/cm2 and 1.1, respectively. The effect of exposure time on etching characteristics was also studied
URI: http://eprint.iitd.ac.in/dspace/handle/2074/1592
Appears in Collections:Physics

Files in This Item:

File Description SizeFormat
guptaamo1988.pdf39.09 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback