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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1592

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dc.contributor.authorGupta, P K-
dc.contributor.authorChopra, K L-
dc.date.accessioned2006-04-10T04:12:25Z-
dc.date.available2006-04-10T04:12:25Z-
dc.date.issued1988-
dc.identifier.citationElectron Device Letters, IEEE, 9(1), 17 - 19en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1592-
dc.description.abstractLithographic properties of amorphous silicon films exposed to glow-discharge hydrogen plasma and ion beams have been investigated. The rate of film etching by a CF4 plasma is lowered by exposure, giving rise to a negative resist behavior of the material. The sensitivity and contrast are ~1018 ions/cm2 and 1.1, respectively. The effect of exposure time on etching characteristics was also studieden
dc.format.extent40032 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectamorphous siliconen
dc.subjectglow-discharge hydrogen plasmaen
dc.titleAmorphous silicon as a resist materialen
dc.typeArticleen
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