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|Title: ||Amorphous investigation of interface and band gap states in amorphous silicon p-i-n solar cells using current deep level transient spectroscopy|
|Authors: ||Murthy, R V R|
|Keywords: ||transient spectroscopy|
Si:H p-i-n solar cells.
|Issue Date: ||1996|
|Publisher: ||Elsevier Science|
|Citation: ||Journal of Non-Crystalline Solids, 197, 250-253|
|Abstract: ||Current deep level transient spectroscopy (DLTS) studies were performed on as-deposited and reverse biased annealed samples of a-Si:H p-i-n solar cells. These studies indicate interface states at p / i and i / n junctions, in addition to the band gap states in the i-layer. The hole and electron trap states are located at 0.8 and 1.12 eV, respectively, above the valence band, whereas the interface states at the p / i junction are located at 0.55 eV and those at the i/n junction at 1.2 eV above the valence band. A decrease in the interface states with reverse biased nnealing treatment has been observed.|
|Appears in Collections:||Applied Mechanics|
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