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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/177

Title: Amorphous investigation of interface and band gap states in amorphous silicon p-i-n solar cells using current deep level transient spectroscopy
Authors: Murthy, R V R
Dutta, V
Keywords: transient spectroscopy
Si:H p-i-n solar cells.
Issue Date: 1996
Publisher: Elsevier Science
Citation: Journal of Non-Crystalline Solids, 197, 250-253
Abstract: Current deep level transient spectroscopy (DLTS) studies were performed on as-deposited and reverse biased annealed samples of a-Si:H p-i-n solar cells. These studies indicate interface states at p / i and i / n junctions, in addition to the band gap states in the i-layer. The hole and electron trap states are located at 0.8 and 1.12 eV, respectively, above the valence band, whereas the interface states at the p / i junction are located at 0.55 eV and those at the i/n junction at 1.2 eV above the valence band. A decrease in the interface states with reverse biased nnealing treatment has been observed.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/177
Appears in Collections:Applied Mechanics

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