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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/177

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dc.contributor.authorMurthy, R V R-
dc.contributor.authorDutta, V-
dc.date.accessioned2005-05-27T10:36:55Z-
dc.date.available2005-05-27T10:36:55Z-
dc.date.issued1996-
dc.identifier.citationJournal of Non-Crystalline Solids, 197, 250-253en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/177-
dc.description.abstractCurrent deep level transient spectroscopy (DLTS) studies were performed on as-deposited and reverse biased annealed samples of a-Si:H p-i-n solar cells. These studies indicate interface states at p / i and i / n junctions, in addition to the band gap states in the i-layer. The hole and electron trap states are located at 0.8 and 1.12 eV, respectively, above the valence band, whereas the interface states at the p / i junction are located at 0.55 eV and those at the i/n junction at 1.2 eV above the valence band. A decrease in the interface states with reverse biased nnealing treatment has been observed.en
dc.format.extent106,586 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.publisherElsevier Scienceen
dc.subjecttransient spectroscopyen
dc.subjectSi:H p-i-n solar cells.en
dc.titleAmorphous investigation of interface and band gap states in amorphous silicon p-i-n solar cells using current deep level transient spectroscopyen
Appears in Collections:Applied Mechanics

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