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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/181

Title: Deposition of molybdenum nitride thin films by r.f. reactive magnetron sputtering
Authors: Anitha, V P
Major, S
Chandrashekharam, D
Bhatnagar, Mukesh
Keywords: Molybdenum nitride
Thin films
Magnetron sputtering
Issue Date: 1996
Publisher: Elsevier Science
Citation: Surface and Coatings Technology 79, 50-54
Abstract: Molybdenum nitride thin films were prepared by the reactive r.f. magnetron sputtering echnique, on grounded substrates, using nitrogen as reactive gas. The effect of the variation of nitrogen partial pressure and the substrate temperature on the microstructure of these films has been investigated. X-ray and electron diffraction studies were used to optimize the growth conditions leading to single-phase 7-MozN thin films. The composition of the films was estimated using Auger electron spectroscopy studies. Single- phase f.c.c. 7-Mo2N films exhibiting metallic conductivity have been obtained over a wide range of nitrogen partial pressure. The films were polycrystalline in nature having grain size in the range 10-25 nm. The preferred orientation of the rystallites and the lattice parameter are found to depend on the nitrogen incorporation in the film. The morphology of all the films lies in the zone T regime of Thornton's structure zone model. The resistivity of these films exhibits a dependence on the size and orientation of the grains and appears to be determined by grain-boundary-related effects. The microstructure of the films is not significantly influenced by a variation of the substrate temperature in the range 300-575 K.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/181
Appears in Collections:Applied Mechanics

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