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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/182

Title: Effect of light soaking on a-Si:H solar cells under reverse biased annealing treatment
Authors: Murthy, R V R
Dutta, V
Keywords: on a-Si:H p-i-n solar cells
plasma chemical
vapor deposition
Reverse biased
annealing treatment
hydrogen motion.
Issue Date: 1996
Publisher: Elsevier Science
Citation: Journal of Non-Crystalline Solids, 204, 92-94
Abstract: The bulk and interface states and their effect on a-Si:H p-i-n solar cells have been nvestigated using dark reverse current-voltage (J-V) properties on the basis of thermal generation of carriers from the defect states. In this study, the samples are prepared by plasma chemical vapor deposition CVD (multi-chamber) deposition technique. The open circuit voltage, Voc, short circuit current, Isc, and efficiency of the cells are, respectively, 0.8 V, 12.7 mA/cm 2 and 5.2%. The bulk (i-layer) and interface (p/i) state densities in these cells have been determined. Reverse biased annealing treatment on these cells shows an effect on the interface states only. The interface state density decreases in the cells which are annealed at - 2 V. The observed insignificant effect of light soaking in these cells is xplained in terms of hydrogen motion.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/182
Appears in Collections:Applied Mechanics

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