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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/186

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dc.contributor.authorSrinivas, G-
dc.contributor.authorVankar, V D-
dc.date.accessioned2005-05-28T06:16:04Z-
dc.date.available2005-05-28T06:16:04Z-
dc.date.issued1996-
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/186-
dc.description.abstractSystematic ellipsometric studies of MoSi2(tetragona1) thin films formed by RTA processing of cosputtered Mo25 Si75,Mo30 Si70 and Mo36 Si64 thin films are discussed. The optical properties of these films in the measured spectral range 1.3-5.3 eV were observed to be dominated by the microstructural variations such as due to the changes in density, oxide overlayer thickness and composition, surface roughness, and redistribution of available excess silicon (after formation of MoSi2 (tetragonal) phase). These microstructural variations indicated modification of interfaces and significant change in conductivity, which were corroborated in the AES depth profiles and the electrical resistivity measurements.en
dc.format.extent707545 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectthin filmsen
dc.subjectsputteringen
dc.subjectoptical propertiesen
dc.titleEllopsometric studies of polycrystalline molybdenum silicide thin filmsen
Appears in Collections:Applied Mechanics

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