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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2074/186
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Full metadata record
| DC Field | Value | Language |
|---|
| contributor.author | Srinivas, G | - |
| contributor.author | Vankar, V D | - |
| date.accessioned | 2005-05-28T06:16:04Z | - |
| date.available | 2005-05-28T06:16:04Z | - |
| date.issued | 1996 | - |
| identifier.uri | http://eprint.iitd.ac.in/dspace/handle/2074/186 | - |
| description.abstract | Systematic ellipsometric studies of MoSi2(tetragona1) thin films formed by
RTA processing of cosputtered Mo25 Si75,Mo30 Si70 and Mo36 Si64 thin films are
discussed. The optical properties of these films in the measured spectral
range 1.3-5.3 eV were observed to be dominated by the microstructural
variations such as due to the changes in density, oxide overlayer thickness
and composition, surface roughness, and redistribution of available excess
silicon (after formation of MoSi2 (tetragonal) phase). These microstructural
variations indicated modification of interfaces and significant change in
conductivity, which were corroborated in the AES depth profiles and the
electrical resistivity measurements. | en |
| format.extent | 707545 bytes | - |
| format.mimetype | application/pdf | - |
| language.iso | en | - |
| subject | thin films | en |
| subject | sputtering | en |
| subject | optical properties | en |
| title | Ellopsometric studies of polycrystalline molybdenum silicide thin films | en |
| Appears in Collections: | Applied Mechanics
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Files in This Item:
| File |
Description |
Size | Format |
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| sd144.pdf | | 690Kb | Adobe PDF | View/Open |
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