DSpace
 

EPrints@IIT Delhi >
Faculty Research Publicatons  >
Electrical Engineering >

Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1886

Title: Miller's approximation in VLSI and power bipolar transistors with reach-through collectors
Authors: Kumar, M J
Datta, K
Keywords: nonlocal impact ionization
reach-through collector
bipolar transistors
empirical parameter
Issue Date: 1997
Citation: Electron Devices, IEEE Transactions on, 44(12), 2305 - 2307p.
Abstract: Using a modified ionization model based on nonlocal impact ionization, Miller's relationship is examined for typical reach-through collector VLSI bipolar transistors with collector epi-thickness between 0.025 and 1 μm. The empirical parameter n in Miller's relationship is evaluated under nonlocal impact ionization conditions within the useful range of current gain which corresponds to 0.1>1-1/M>0.005. The validity of Miller's relationship is also examined for power bipolar transistors having reach-through collectors (Wepi⩽Wpt) using local ionization model and design curves for the empirical parameter n are provided for different collector structures
URI: http://eprint.iitd.ac.in/dspace/handle/2074/1886
Appears in Collections:Electrical Engineering

Files in This Item:

File Description SizeFormat
kumarmil1997.pdf46.65 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback