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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1952

Title: A simple hole scattering length model for the solution of charge transport in bipolar transistors
Authors: Datta, K
Jagadesh Kumar, M
Keywords: warping parabolic
quasi-elastic approximation
acoustic phonon scattering
ballistic hole transport
Issue Date: 1999
Citation: Electron Devices, IEEE Transactions on, 46(6), 1186 - 1188p.
Abstract: Considering the small warping parabolic heavy hole model with the quasi-elastic approximation in acoustic phonon scattering, it is shown that the hole scattering length is independent of the hole energy. This result now makes it possible to solve the Boltzmann transport equation to obtain a simple analytical solution for the ballistic hole transport in a thin and uniformly doped base of a pnp transistor
URI: http://eprint.iitd.ac.in/dspace/handle/2074/1952
Appears in Collections:Electrical Engineering

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