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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/1952

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DC FieldValueLanguage
dc.contributor.authorDatta, K-
dc.contributor.authorJagadesh Kumar, M-
dc.date.accessioned2006-07-03T06:37:19Z-
dc.date.available2006-07-03T06:37:19Z-
dc.date.issued1999-
dc.identifier.citationElectron Devices, IEEE Transactions on, 46(6), 1186 - 1188p.en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/1952-
dc.description.abstractConsidering the small warping parabolic heavy hole model with the quasi-elastic approximation in acoustic phonon scattering, it is shown that the hole scattering length is independent of the hole energy. This result now makes it possible to solve the Boltzmann transport equation to obtain a simple analytical solution for the ballistic hole transport in a thin and uniformly doped base of a pnp transistoren
dc.format.extent69573 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectwarping parabolicen
dc.subjectquasi-elastic approximationen
dc.subjectacoustic phonon scatteringen
dc.subjectballistic hole transporten
dc.titleA simple hole scattering length model for the solution of charge transport in bipolar transistorsen
dc.typeArticleen
Appears in Collections:Electrical Engineering

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