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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2002

Title: A 3.3 V compatible 2.5 V TTL-to-CMOS bidirectional I/O buffer
Authors: Maheshwari, S K
Visweswaran, G S
Keywords: a 3.3 V compatible 2.5 V TTL-to-CMOS bidirectional I/O buffer
active voltage degradation
low voltage circuit
gate oxide protection
Issue Date: 2000
Citation: VLSI Design, Thirteenth International Conference on, 484 - 487p.
Abstract: Design of a 3.3 V compatible 2.5 V TTL-to-CMOS bidirectional I/O buffer is proposed. Gate oxide protection was implemented without active voltage degradation, which reduces static and dynamic current levels and improves noise immunity for the low voltage circuit of this kind. Fast removal of stored charge further improves gate oxide protection and circuit recovery from overvoltage condition. A circuit was designed and simulated in 0.25 μm technology
URI: http://eprint.iitd.ac.in/dspace/handle/2074/2002
Appears in Collections:Electrical Engineering

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