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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2009

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DC FieldValueLanguage
dc.contributor.authorJagadesh Kumar, M-
dc.contributor.authorPatri, V S-
dc.date.accessioned2006-07-10T09:47:04Z-
dc.date.available2006-07-10T09:47:04Z-
dc.date.issued2001-
dc.identifier.citationElectron Devices, IEEE Transactions on, 48(6), 1222 - 1224p.en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/2009-
dc.description.abstractThis paper shows that base doping profiles obtained using any iterative scheme for reducing the base transit time τb in bipolar transistors for a given neutral base width must take into account the heavy doping effects implicitly. Comparing our results with those reported earlier, we demonstrate that if the heavy doping effects are not implicitly included in the iterative scheme it will result in a completely different base doping profile leading to an overestimation of base transit time and underestimation of base resistanceen
dc.format.extent71687 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectdoping profilesen
dc.subjectbipolar transistorsen
dc.titleOn the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistoren
dc.typeArticleen
Appears in Collections:Electrical Engineering

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