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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2074/2009
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Full metadata record
| DC Field | Value | Language |
|---|
| contributor.author | Jagadesh Kumar, M | - |
| contributor.author | Patri, V S | - |
| date.accessioned | 2006-07-10T09:47:04Z | - |
| date.available | 2006-07-10T09:47:04Z | - |
| date.issued | 2001 | - |
| identifier.citation | Electron Devices, IEEE Transactions on, 48(6), 1222 - 1224p. | en |
| identifier.uri | http://eprint.iitd.ac.in/dspace/handle/2074/2009 | - |
| description.abstract | This paper shows that base doping profiles obtained using any iterative scheme for reducing the base transit time τb in bipolar transistors for a given neutral base width must take into account the heavy doping effects implicitly. Comparing our results with those reported earlier, we demonstrate that if the heavy doping effects are not implicitly included in the iterative scheme it will result in a completely different base doping profile leading to an overestimation of base transit time and underestimation of base resistance | en |
| format.extent | 71687 bytes | - |
| format.mimetype | application/pdf | - |
| language.iso | en | en |
| subject | doping profiles | en |
| subject | bipolar transistors | en |
| title | On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor | en |
| type | Article | en |
| Appears in Collections: | Electrical Engineering
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Files in This Item:
| File |
Description |
Size | Format |
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| kumarthe2001.pdf | | 70Kb | Adobe PDF | View/Open |
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