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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2084

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dc.contributor.authorJagadesh Kumar, M-
dc.contributor.authorRoy, S D-
dc.date.accessioned2006-08-08T03:32:11Z-
dc.date.available2006-08-08T03:32:11Z-
dc.date.issued2003-
dc.identifier.citationMicroelectronics, ICM Proceedings of the 15th International Conference on, 336 - 339p.en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/2084-
dc.description.abstractTwo-dimensional numerical simulation studies of collector-emitter breakdown voltage (BV/sub CEO/) of a novel collector-tub lateral bipolar transistor (CTLBT) on silicon-on-insulator (SOI) are presented. The collector-tub is realized by etching the buried oxide (BOX) at the collector high-low (NN/sup +/) junction side followed by an N-implantation in a conventional lateral bipolar transistor (LBT) on SOI. Such a modification makes the collector potential to be absorbed both by the collector drift and substrate regions and the electric field spreads along the collector drift length. The simulation results show that by choosing appropriate buried oxide (BOX) thickness (t/sub OX/), collector-tub junction depth (X/sub j/), drift region doping (N/sub D/) and substrate doping (N/sub S/), the electric field profile in the collector drift region of the CTLBT can be redistributed so that its BV/sub CEO/ value is more than double when compared with a conventional lateral bipolar transistor on SOI. The reasons for this significant improvement in breakdown performance are explained.en
dc.format.extent62139 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectcollector-tub lateral bipolar transistoren
dc.subjectsilicon-on-insulatoren
dc.subjectburied oxideen
dc.subjectlateral bipolar transistoren
dc.titleA novel collector-tub concept for realizing high-voltage lateral bipolar transistors on SOIen
dc.typeArticleen
Appears in Collections:Electrical Engineering

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