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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2091

Title: A new lateral SiGe-base PNM Schottky collector bipolar transistor on SOI for non-saturating VLSI logic design
Authors: M J Kumar
Venkateshrao, D
Keywords: schottky collector bipolar transistor
silicon-on-insulator
suppressed Kirk
Issue Date: 2003
Citation: VLSI Design, Proceedings 16th International Conference on, 489 - 492p.
Abstract: A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/2091
Appears in Collections:Electrical Engineering

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