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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/222

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dc.contributor.authorAnand, Suruchi-
dc.contributor.authorVerma, Prabhat-
dc.contributor.authorJain, K P-
dc.contributor.authorAbbi, S C-
dc.date.accessioned2005-06-03T10:05:45Z-
dc.date.available2005-06-03T10:05:45Z-
dc.date.issued1996-
dc.identifier.citationPhysica B, 226, 331-337en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/222-
dc.description.abstractTemperature-dependent Raman scattering xperiments were performed on the (1 1 1) face of crystalline ZnSe to estimate the phonon ifetimes for the LO and TO phonons for temperatures between 20 and 300 K. The lifetimes at higher temperatures are mainly due to the anharmonic decay of optical phonons into low-energy phonons. The temperature-independent contributions from inherent crystal defects and from boundary scattering become comparable to the phonon scattering contribution at lower temperatures. The temperature dependence of the population of the acoustic mode (2TA) is found to follow Bose-Einstein statistics.en
dc.format.extent436720 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectTemperature-dependenten
dc.subjectanharmonic decayen
dc.subjectoptical phononsen
dc.subjectlower temperaturesen
dc.subjectBose-Einsteinen
dc.subjectcrystalline ZnSeen
dc.titleTemperature dependence of optical phonon lifetimes in ZnSeen
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