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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2074/223
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| Title: | Depth profile analysis of porous Si film by ERDA using a ΔE - E detector telescope |
| Authors: | Avasthi, D K
Hui, S K
Subramaniyam, E T
Mehta, B R |
| Keywords: | depth profiling
E- E detector telescope.
porous
analysis |
| Issue Date: | 1996 |
| Citation: | Vacuum, 47(9), 1061-1064 |
| Abstract: | A complete analytical study as well as depth profiling of the constituent elements of a orous Si layer have been carried out by elastic recoil detection analysis using 700 MeVAg ions and a AE- E detector telescope. Quantitative estimates of elements H, C, N, 0, F, Mg and Si in a porous Si film have been made. The analysis
of data indicates that the lowest detection limit of the technique is 8x ‘10p4 at% with an inaccuracy of 15%. |
| URI: | http://eprint.iitd.ac.in/dspace/handle/2074/223 |
| Appears in Collections: | Physics
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| Avasthidep96.pdf | | 150Kb | Adobe PDF | View/Open |
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