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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/223

Title: Depth profile analysis of porous Si film by ERDA using a ΔE - E detector telescope
Authors: Avasthi, D K
Hui, S K
Subramaniyam, E T
Mehta, B R
Keywords: depth profiling
E- E detector telescope.
porous
analysis
Issue Date: 1996
Citation: Vacuum, 47(9), 1061-1064
Abstract: A complete analytical study as well as depth profiling of the constituent elements of a orous Si layer have been carried out by elastic recoil detection analysis using 700 MeVAg ions and a AE- E detector telescope. Quantitative estimates of elements H, C, N, 0, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8x ‘10p4 at% with an inaccuracy of 15%.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/223
Appears in Collections:Physics

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