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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/223

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dc.contributor.authorAvasthi, D K-
dc.contributor.authorHui, S K-
dc.contributor.authorSubramaniyam, E T-
dc.contributor.authorMehta, B R-
dc.date.accessioned2005-06-03T10:13:30Z-
dc.date.available2005-06-03T10:13:30Z-
dc.date.issued1996-
dc.identifier.citationVacuum, 47(9), 1061-1064en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/223-
dc.description.abstractA complete analytical study as well as depth profiling of the constituent elements of a orous Si layer have been carried out by elastic recoil detection analysis using 700 MeVAg ions and a AE- E detector telescope. Quantitative estimates of elements H, C, N, 0, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8x ‘10p4 at% with an inaccuracy of 15%.en
dc.format.extent447106 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectdepth profilingen
dc.subjectE- E detector telescope.en
dc.subjectporousen
dc.subjectanalysisen
dc.titleDepth profile analysis of porous Si film by ERDA using a ΔE - E detector telescopeen
dc.typeArticleen
Appears in Collections:Physics

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