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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2252

Title: Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET
Authors: Chaudhry, Anurag
M Jagadesh Kumar
Keywords: fully depleted
dual-material gate
threshold voltage roll-up
Issue Date: 2004
Citation: Electron Devices, IEEE Transactions on, 51(9), 1463 - 1467p.
Abstract: The novel features of a fully depleted (FD) dual-material gate (DMG) silicon-on-insulator (SOI) MOSFET are explored theoretically and compared with those of a compatible SOI MOSFET. The two-dimensional numerical simulation studies demonstrate the novel features as threshold voltage roll-up and simultaneous transconductance enhancement and suppression of short-channel effects offered by the FD DMG SOI MOSFET. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate material. This work illustrates the benefits of high-performance FD DMG SOI MOS devices over their single material gate counterparts and provides an incentive for further experimental exploration.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/2252
Appears in Collections:Electrical Engineering

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