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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2252

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DC FieldValueLanguage
dc.contributor.authorChaudhry, Anurag-
dc.contributor.authorM Jagadesh Kumar-
dc.date.accessioned2006-11-15T06:44:56Z-
dc.date.available2006-11-15T06:44:56Z-
dc.date.issued2004-
dc.identifier.citationElectron Devices, IEEE Transactions on, 51(9), 1463 - 1467p.en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/2252-
dc.description.abstractThe novel features of a fully depleted (FD) dual-material gate (DMG) silicon-on-insulator (SOI) MOSFET are explored theoretically and compared with those of a compatible SOI MOSFET. The two-dimensional numerical simulation studies demonstrate the novel features as threshold voltage roll-up and simultaneous transconductance enhancement and suppression of short-channel effects offered by the FD DMG SOI MOSFET. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate material. This work illustrates the benefits of high-performance FD DMG SOI MOS devices over their single material gate counterparts and provides an incentive for further experimental exploration.en
dc.format.extent489984 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectfully depleteden
dc.subjectdual-material gateen
dc.subjectsilicon-on-insulatoren
dc.subjectthreshold voltage roll-upen
dc.subject(SOI) MOSFETen
dc.subjectDMGen
dc.titleInvestigation of the novel attributes of a fully depleted dual-material gate SOI MOSFETen
dc.typeArticleen
Appears in Collections:Electrical Engineering

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