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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2351

Title: Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs
Authors: M Jagadesh Kumar
Chaudhry, Anurag
Keywords: silicon-on-insulator
MOSFETs
short-channel effects (SCEs)
drain-induced barrier-lowering
submicrometer regime
2-D numerical simulations
Issue Date: 2004
Citation: Electron Devices, IEEE Transactions on, 51(4), 569 - 574p.
Abstract: A two-dimensional (2-D) analytical model for the surface potential variation along the channel in fully depleted dual-material gate silicon-on-insulator MOSFETs is developed to investigate the short-channel effects (SCEs). Our model includes the effects of the source/drain and body doping concentrations, the lengths of the gate metals and their work functions, applied drain and substrate biases, the thickness of the gate and buried oxide and also the silicon thin film. We demonstrate that the surface potential in the channel region exhibits a step function that ensures the screening of the drain potential variation by the gate near the drain resulting in suppressed SCEs like the hot-carrier effect and drain-induced barrier-lowering (DIBL). The model is extended to find an expression for the threshold voltage in the submicrometer regime, which predicts a desirable "rollup" in the threshold voltage with decreasing channel lengths. The accuracy of the results obtained using our analytical model is verified using 2-D numerical simulations.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/2351
Appears in Collections:Electrical Engineering

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