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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/238

Title: Characterization of PbxMn1−xS thin films prepared by flash evaporation technique
Authors: Swain, P K
Sehgal, H K
Keywords: Electron microscopy
Optical properties
Semiconductors
Structural properties
Issue Date: 1996
Citation: Thin Solid Films, 287(1-2), 110-114
Abstract: Electron diffraction investigations carried out on flash evaporated lead manganese sulphide films with lead concentration x varied in the range 0.16 <x ~ 0.84, grown on freshly cleaved single crystal KC! substrates maintained at temperature Ts of 65, 130, 165, 225 °C, indicate that these films have epitaxial growth with (100) zone axis orientation of the grains in all films and with a single phase fcc structure. The single phase fcc lattice indicates the presence of ternary materials of the type PbxMn~_xS in the films. The structural characteristics of the films are explained by the atom-by-atom condensation process. Optical absorption studies reveal the presence of a single absorption edge indicating the presence of a single material phase and corroborate the presence of PbxMnt_~S alloys in the films. The direct optical band gap of the film materials varies between 2.26 eV and 0.52 eV as the Pb concentration x is changed from 0.16 to 0.84. The room temperature dc resistivity of the films increases with T~ and decreases with increase in Pb concentration x. The variation of resistivity is explained on the basis of a predominant grain boundary conduction mechanism.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/238
Appears in Collections:Physics

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