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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/238

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dc.contributor.authorSwain, P K-
dc.contributor.authorSehgal, H K-
dc.date.accessioned2005-06-03T13:04:51Z-
dc.date.available2005-06-03T13:04:51Z-
dc.date.issued1996-
dc.identifier.citationThin Solid Films, 287(1-2), 110-114en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/238-
dc.description.abstractElectron diffraction investigations carried out on flash evaporated lead manganese sulphide films with lead concentration x varied in the range 0.16 <x ~ 0.84, grown on freshly cleaved single crystal KC! substrates maintained at temperature Ts of 65, 130, 165, 225 °C, indicate that these films have epitaxial growth with (100) zone axis orientation of the grains in all films and with a single phase fcc structure. The single phase fcc lattice indicates the presence of ternary materials of the type PbxMn~_xS in the films. The structural characteristics of the films are explained by the atom-by-atom condensation process. Optical absorption studies reveal the presence of a single absorption edge indicating the presence of a single material phase and corroborate the presence of PbxMnt_~S alloys in the films. The direct optical band gap of the film materials varies between 2.26 eV and 0.52 eV as the Pb concentration x is changed from 0.16 to 0.84. The room temperature dc resistivity of the films increases with T~ and decreases with increase in Pb concentration x. The variation of resistivity is explained on the basis of a predominant grain boundary conduction mechanism.en
dc.format.extent489246 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.subjectElectron microscopyen
dc.subjectOptical propertiesen
dc.subjectSemiconductorsen
dc.subjectStructural propertiesen
dc.titleCharacterization of PbxMn1−xS thin films prepared by flash evaporation techniqueen
dc.typeArticleen
Appears in Collections:Physics

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