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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2395

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DC FieldValueLanguage
dc.contributor.authorSingh, Awatar-
dc.contributor.authorVyas, P D-
dc.contributor.authorKhokle, W S-
dc.contributor.authorSingh, C-
dc.contributor.authorLal, K-
dc.date.accessioned2007-01-12T08:28:08Z-
dc.date.available2007-01-12T08:28:08Z-
dc.date.issued1993-
dc.identifier.citationSolid-State Electronics, 36(9), 1365-1367p.en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/2395-
dc.format.extent73051 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectmaterial propertiesen
dc.subjectWSi2en
dc.subjectdischarge treatmenten
dc.titleProcess and material properties of WSi2 formed by discharge treatmenten
dc.typeArticleen
Appears in Collections:Industrail Tribology Machine Dynamics [ITMMEC]

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