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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2492

Title: Interaction of Mo/Ni and Mo/Co bilayer structures with silicon
Authors: Rastogi, R S
Vankar, V D
Chopra, K L
Keywords: Temperature range
Silicon diffusion
Reaction mechanism
Issue Date: 1991
Citation: Thin Solid Films,206(1-2), 34-39p.
Abstract: The thin film interaction of Mo/Ni and Mo/Co bilayer structures was investigated in the temperature range 500–650 °C by Auger electron spectroscopy and glancing angle X-ray diffraction. It was observed that (i) the silicide formation temperature is lowered, (ii) the rate of silicon diffusion is enhanced and (iii) hindrance due to the natural SiOx layer is avoided by interposing a thin layer (approximately 100 Å) of nickel-cobalt between the molybdenum and silicon. The temperature of formation of MoSi2 (tetragonal phase) was found to be approximately 500–550 °C. The reaction mechanism and the role of the interlayer is discussed on the basis of various reaction temperatures and moving species (nickel, cobalt and silicon) during silicide formation
URI: http://eprint.iitd.ac.in/dspace/handle/2074/2492
Appears in Collections:Physics

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