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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2492

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dc.contributor.authorRastogi, R S-
dc.contributor.authorVankar, V D-
dc.contributor.authorChopra, K L-
dc.identifier.citationThin Solid Films,206(1-2), 34-39p.en
dc.description.abstractThe thin film interaction of Mo/Ni and Mo/Co bilayer structures was investigated in the temperature range 500–650 °C by Auger electron spectroscopy and glancing angle X-ray diffraction. It was observed that (i) the silicide formation temperature is lowered, (ii) the rate of silicon diffusion is enhanced and (iii) hindrance due to the natural SiOx layer is avoided by interposing a thin layer (approximately 100 Å) of nickel-cobalt between the molybdenum and silicon. The temperature of formation of MoSi2 (tetragonal phase) was found to be approximately 500–550 °C. The reaction mechanism and the role of the interlayer is discussed on the basis of various reaction temperatures and moving species (nickel, cobalt and silicon) during silicide formationen
dc.format.extent171685 bytes-
dc.subjectTemperature rangeen
dc.subjectSilicon diffusionen
dc.subjectReaction mechanismen
dc.titleInteraction of Mo/Ni and Mo/Co bilayer structures with siliconen
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