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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2497

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dc.contributor.authorGupta, A-
dc.contributor.authorMurthy, A S N-
dc.date.accessioned2007-02-12T04:08:08Z-
dc.date.available2007-02-12T04:08:08Z-
dc.date.issued1991-
dc.identifier.citationJournal of Power Sources,35(3, 8), 305-312p.en
dc.identifier.urihttp://eprint.iitd.ac.in/dspace/handle/2074/2497-
dc.description.abstractCadmium-doped CuInS2 films were prepared from electroless-deposited cadmium-doped films of CuIn alloy in H2S gas at 550 °C. The compositional, morphological, and photoelectrochemical properties of both doped and undoped films were examined and compareden
dc.format.extent155853 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.subjectCadmium-dopeden
dc.subjectCompositionalen
dc.subjectMorphologicalen
dc.subjectPhotoelectrochemicalen
dc.titleCharacterization of cadmium-doped copper indium sulphide films prepared by a two-step techniqueen
dc.typeArticleen
Appears in Collections:Chemistry

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