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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2503

Title: Electrical and optical properties of ion-beam- sputtered amorphous silicon-germanium alloy films
Authors: Malhotra, L K
Kashyap, Subhash C
Bhan, Mohan Krishan
Keywords: Silicon-germanium
Energy-voltage
Sputtering technique
Electrical conductivity
Issue Date: 1991
Citation: Thin Solid Films,203(1), 23-32p.
Abstract: Amorphous silicon-germanium (a-Si1−xGex) thin films have been prepared co-sputtering a composite target of high purity crystalline silicon (c-Si) and c-Ge using ion beam sputtering technique. The desired composition has been obtained by suitably adjusting the exposed areas of c-Si and c-Ge. The electrical, optical and structural properties of these films have been investigated as functions of composition (for a-Si1-xGex) and ion beam energy-voltage and substrate temperature (for a-Si50Ge50). The amorphous silicon-germanium films deposited with increased x or decreased beam voltage and/or substrate temperature, in general, exhibit an increase in their electrical conductivity. The conduction mechanism associated with these films is dominated by hopping between the localized states. The a-Si50Ge50 films deposited at a beam energy of 1000 V and substrate temperature of 300°C have a band gap and an electrical conductivity of 1.1 eV and 3 × 10−5 (Ωcm)-1 respectively.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/2503
Appears in Collections:Physics

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