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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2505

Title: The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition
Authors: Gupta, Manju
Rathi, V K
Thangaraj, R
Agnihotri, O P
Chari, K S
Keywords: Silicon nitride
Chemical vapor
Circuit technology
Plasma
Hydrogen
Issue Date: 1991
Citation: Thin Solid Films,204(1), 77-106p.
Abstract: The purpose of this paper is to review the preparation and characterization of thin films of silicon nitride deposited by the technique of plasma-enhanced chemical vapor deposition. The applications of silicon nitride thin films in integrated circuit technology are also reviewed. The paper also introduces the modifications to the plasma chemical vapor deposition system used to avoid plasma bombardment of the substrate and to reduce hydrogen incorporation in the layers in the form of Si-H and N-H bonds. The effect on film properties of post-deposition annealing at a temperature higher than the deposition temperature is reported.
URI: http://eprint.iitd.ac.in/dspace/handle/2074/2505
Appears in Collections:Physics

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