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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2074/250
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Full metadata record
| DC Field | Value | Language |
|---|
| contributor.author | Rathi, V K | - |
| contributor.author | Gupta, Manju | - |
| contributor.author | Agnihotri, O P | - |
| date.accessioned | 2005-06-06T13:01:26Z | - |
| date.available | 2005-06-06T13:01:26Z | - |
| date.issued | 1995 | - |
| identifier.citation | Microelectronics Journal, 26(6), 563-567 | en |
| identifier.uri | http://eprint.iitd.ac.in/dspace/handle/2074/250 | - |
| description.abstract | The influence was studied of the concentration of ammonium fluoride (NH4F) on the etch rates of silicon nitride films deposited by the mercury-sensitized photochemical vapour deposition method. The composition of the buffered HF was varied between 0 and 40 weight percent (wt%) NH4F with 2 to 12wt°/0 hydrofluoric acid (HF).The etch rates as a function of buffered HF composition were measured for films deposited under various process parameters, viz. reactant gas ratio, substrate temperature and chamber pressure. The results of etch rates as a function of process parameters were correlated to variations in material density and silicon content (Si/N ratio) in the films. | en |
| format.extent | 305339 bytes | - |
| format.mimetype | application/pdf | - |
| language.iso | en | - |
| subject | ammonium fluoride | en |
| subject | silicon nitride | en |
| subject | photochemical | en |
| subject | hydrofluoric | en |
| title | The dependence of etch rate of photo- CVD silicon nitride films on NH4F content in buffered HF | en |
| type | Article | en |
| Appears in Collections: | Physics
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| ratthe95.pdf | | 298Kb | Adobe PDF | View/Open |
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