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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/250

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dc.contributor.authorRathi, V K-
dc.contributor.authorGupta, Manju-
dc.contributor.authorAgnihotri, O P-
dc.identifier.citationMicroelectronics Journal, 26(6), 563-567en
dc.description.abstractThe influence was studied of the concentration of ammonium fluoride (NH4F) on the etch rates of silicon nitride films deposited by the mercury-sensitized photochemical vapour deposition method. The composition of the buffered HF was varied between 0 and 40 weight percent (wt%) NH4F with 2 to 12wt°/0 hydrofluoric acid (HF).The etch rates as a function of buffered HF composition were measured for films deposited under various process parameters, viz. reactant gas ratio, substrate temperature and chamber pressure. The results of etch rates as a function of process parameters were correlated to variations in material density and silicon content (Si/N ratio) in the films.en
dc.format.extent305339 bytes-
dc.subjectammonium fluorideen
dc.subjectsilicon nitrideen
dc.titleThe dependence of etch rate of photo- CVD silicon nitride films on NH4F content in buffered HFen
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