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Please use this identifier to cite or link to this item: http://eprint.iitd.ac.in/handle/2074/2519

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dc.contributor.authorReddy, G B-
dc.contributor.authorDhar, A-
dc.contributor.authorMalhotra, L K-
dc.contributor.authorSharmila, E K-
dc.identifier.citationThin Solid Films, 220(1-2), 111-115p.en
dc.description.abstractAdherent and pin-hole free amorphous Sb2Te3 thin films have been obtained by vacuum evaporation at substrate temperatures ≤25 °C. The films have been crystallized by thermal and laser annealing, and the crystallization processes monitored as a function of annealing temperature and laser scan speed. A comparative study of topography reveals disk-shaped crystallized areas in thermal crystallization and dendrite growth in the laser induced process. The crystallized films in both cases contain a single Sb2Te3 phase. Activation energy of 2 eV for crystallization, determined using differential scanning calorimetery indicates good room temperature stability of the amorphous states.en
dc.format.extent136261 bytes-
dc.subjectpin-hole free amorphousen
dc.subjectdisk-shaped crystallizeden
dc.subjectthermal crystallizationen
dc.subjectamorphous statesen
dc.titleComparative study of crystallization processes in Sb2Te3 films using laser and thermal annealing techniquesen
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